MSC035SMA070B4

$9.71

Description：TRANS SJT N-CH 700V 77A TO247-4
Series：-
Mfr：Microchip Technology
Package：Tube

SKU:bbfaefaa671a Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

MSC035SMA070B4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS SJT N-CH 700V 77A TO247-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MSC035SMA070B4

Description：TRANS SJT N-CH 700V 77A TO247-4
Series：-
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id：2.7V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：99 nC @ 20 V
Vgs (Max)：+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2010 pF @ 700 V
FET Feature：-
Power Dissipation (Max)：283W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for MSC035SMA070B4

MSC035SMA070B4

Single FETs, MOSFETs Overview

The MSC035SMA070B4 is a Silicon Carbide (SiC) N-Channel MOSFET from Microchip Technology, housed in a TO-247-4L package with a source sense terminal. It features a 700V drain-source voltage rating and a typical on-resistance of 35mΩ at VGS=20V. The device supports a continuous drain current of 75A at 25°C case temperature and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Low capacitances and low gate charge for high efficiency
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperatures up to 175°C
Superior avalanche ruggedness and fast body diode

Single FETs, MOSFETs Applications

Photovoltaic inverters and converters
Industrial motor drives
Hybrid Electric Vehicle powertrains
Electric Vehicle chargers
Smart grid transmission and distribution

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix B4 against official Microchip documentation to confirm pinout configuration and package variant. Ensure compatibility with TO-247-4L mounting requirements and thermal interface specifications before procurement. Confirm RoHS compliance status through the manufacturer's latest product change notifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage SiC performance with integrated source sensing. Evaluate thermal management needs based on the 0.38°C/W junction-to-case resistance. Consider the 306A pulsed current capability for transient load conditions and verify gate drive voltage levels match the specified 20V/–5V operating parameters.

Single FETs, MOSFETs Part Context

This part belongs to Microchip’s mSiC™ discrete MOSFET series, designed for high-efficiency power conversion. It utilizes advanced silicon carbide technology to reduce switching losses compared to traditional silicon devices. The product line targets demanding applications in renewable energy and electric mobility sectors.

Single FETs, MOSFETs Replacement Considerations

Consult Microchip's official cross-reference tools or distributor databases for verified equivalent parts. Do not assume functional interchangeability with other 700V SiC MOSFETs without verifying pinout, thermal characteristics, and electrical ratings against the original datasheet.