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The MSC2295-CT1G is an NPN RF amplifier transistor manufactured by onsemi. It is designed for surface-mount applications and housed in a SC-59 (TO-236-3) package. The device features a maximum collector-emitter voltage of 20V and operates at frequencies up to 150MHz. Key electrical characteristics include a reverse transistor capacitance of 1.5pF measured at VCE = 10Vdc, IC = 1.0mAdc, and f = 10.7MHz. Pulse testing conditions are defined with a pulse width ≤ 300μs and duty cycle ≤ 2%.
Verify the component authenticity by checking the manufacturer marking against official datasheet standards. Confirm the package type matches the SC-59 specification. Ensure the part number suffix aligns with the required tape and reel configuration for automated assembly processes. Cross-reference the date code with current production status to guarantee availability.
Select this component when designing circuits requiring an NPN RF transistor with a 20V voltage rating. Consider the SC-59 package dimensions for PCB layout constraints. Evaluate the 150MHz operational limit against the target application frequency. Review the thermal management requirements associated with the small outline package for power dissipation limits.
This device belongs to the MSC22 series of RF transistors produced by onsemi. These components are engineered for general-purpose radio frequency applications. The series provides reliable performance in consumer electronics and communication hardware. The specific model integrates standard BJT characteristics adapted for high-frequency operation within a miniature footprint.
Direct substitutes must match the NPN polarity, 20V rating, and SC-59 package. Verify equivalent RF performance metrics before substitution. Generic replacements may lack the specific capacitance characteristics documented for this part.