MSCC60AM23C4AG

$212.69

Description：MOSFET 2N-CH 600V 81A SP4
Series：-

SKU:bb34a2880855 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCC60AM23C4AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 600V 81A SP4. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCC60AM23C4AG

Description：MOSFET 2N-CH 600V 81A SP4
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：600V
Current - Continuous Drain (Id) @ 25°C：81A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP4
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCC60AM23C4AG

MSCC60AM23C4AG

FET, MOSFET Arrays Overview

The MSCC60AM23C4AG is a high-voltage power module manufactured by Microchip Technology, designed for advanced power conversion applications. It integrates a Silicon Superjunction MOSFET with a Silicon Carbide (SiC) Schottky Barrier Diode within a single package. The device features a Vienna phase leg configuration, providing efficient unidirectional power flow control. Key electrical specifications include a drain-source breakdown voltage (VDSS) of 600 V and a continuous current rating of 81 A. The module utilizes screw mount installation for secure mechanical attachment to thermal management systems.

FET, MOSFET Arrays Feature Summary

Integrates a Silicon Superjunction MOSFET with a SiC Schottky Barrier Diode in a single compact package
Configured specifically as a Vienna phase leg for specialized rectifier topologies
Utilizes Silicon Carbide technology to minimize reverse recovery charge and enhance switching performance

FET, MOSFET Arrays Applications

Vienna rectifier circuits in high-efficiency power supplies
Active front-end converters requiring low harmonic distortion
High-density industrial power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and package variant against the official Microchip datasheet before procurement. Ensure that the requested component matches the exact pinout and thermal characteristics required for the target design. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and availability status. Request updated compliance documentation if necessary for regulatory adherence.

FET, MOSFET Arrays Selection Notes

Select this module when designing Vienna rectifier stages that require integrated fast-recovery diodes alongside superjunction MOSFETs. The 600 V rating suits medium-voltage AC-DC conversion applications. Consider the 81 A current capability relative to thermal dissipation requirements. Evaluate the combined switching losses of the SiC diode and Si MOSFET for efficiency optimization in high-frequency operation scenarios.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's portfolio of discrete semiconductor modules tailored for high-performance power electronics. It combines silicon and silicon carbide technologies to leverage the benefits of both materials. The Vienna phase leg configuration distinguishes it from standard half-bridge or full-bridge modules, targeting specific three-phase rectification architectures.