MSCGLQ50DH120CTBL2NG

MSCGLQ50DH120CTBL2NG

$94.49
  • Description:PM-IGBT-SBD-BL2
  • Series:-

SKU:6200ad54b6d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:PM-IGBT-SBD-BL2
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Asymmetrical Bridge
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):110 A
  • Power - Max:375 W
  • Current - Collector Cutoff (Max):25 µA
  • Input Capacitance (Cies) @ Vce:2.77 nF @ 25 V

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MSCGLQ50DH120CTBL2NG

Overview

The MSCGLQ50DH120CTBL2NG is a 1200 V, 50 A asymmetrical bridge high-speed IGBT4 power module. It integrates four IGBTs and four SiC Schottky diodes in an isolated package with screw mounting terminals. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V to 2.4 V at 50 A, a gate threshold voltage of 5.3 V to 6.3 V, and a total gate charge of 230 nC. The module features a junction-to-heatsink thermal resistance of 0.4 °C/W for the IGBTs and operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • High-speed IGBT4 technology providing low voltage drop and switching losses
  • Integrated SiC Schottky diodes with zero reverse recovery and positive temperature coefficient on forward voltage
  • Kelvin source connection for simplified gate drive circuitry
  • Si3N4 substrate with thick copper layers for enhanced thermal performance

Applications

  • High reliability power systems
  • High efficiency AC/DC and DC/AC converters
  • Motor control applications

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm datasheet revision DS00004102A matches the delivered product. Ensure electrostatic discharge handling protocols are strictly followed during storage and assembly to prevent device damage.

Selection Notes

Select this module for designs requiring high-frequency operation and low thermal resistance. Verify that the required continuous collector current does not exceed 50 A at 100°C case temperature. Ensure the gate drive voltage remains within the ±20 V limit and account for the integrated 4 Ω gate resistor in timing calculations.

Part Context

This component belongs to the MSCGLQ series of asymmetrical bridge modules from Microchip Technology. It utilizes IGBT4 technology combined with Silicon Carbide diodes to optimize switching performance and thermal management compared to standard silicon-based alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative modules based on matching voltage ratings, current capabilities, and pinout compatibility if substitution is necessary.

MSCGLQ50DH120CTBL2NGMSCGLQ50DH120CTBL2NG
$94.49
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