SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MSCGLQ50DH120CTBL2NG is a 1200 V, 50 A asymmetrical bridge high-speed IGBT4 power module. It integrates four IGBTs and four SiC Schottky diodes in an isolated package with screw mounting terminals. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V to 2.4 V at 50 A, a gate threshold voltage of 5.3 V to 6.3 V, and a total gate charge of 230 nC. The module features a junction-to-heatsink thermal resistance of 0.4 °C/W for the IGBTs and operates within a junction temperature range of -55°C to 175°C.
Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm datasheet revision DS00004102A matches the delivered product. Ensure electrostatic discharge handling protocols are strictly followed during storage and assembly to prevent device damage.
Select this module for designs requiring high-frequency operation and low thermal resistance. Verify that the required continuous collector current does not exceed 50 A at 100°C case temperature. Ensure the gate drive voltage remains within the ±20 V limit and account for the integrated 4 Ω gate resistor in timing calculations.
This component belongs to the MSCGLQ series of asymmetrical bridge modules from Microchip Technology. It utilizes IGBT4 technology combined with Silicon Carbide diodes to optimize switching performance and thermal management compared to standard silicon-based alternatives.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative modules based on matching voltage ratings, current capabilities, and pinout compatibility if substitution is necessary.