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Product Detailed Parameters
- Description：PM-IGBT-TFS-SBD~-SP1F
- Series：MSC
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：-
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：-
- Current - Collector Cutoff (Max)：80 A
- Input Capacitance (Cies) @ Vce：-
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Overview
The MSCGTQ100HD65C1AG is a discrete semiconductor module manufactured by Microchip Technology, classified under MOSFET-SBD Modules. It utilizes Silicon Trench technology and features a screw mount installation style. The component operates within a temperature range of -60°C to +200°C. Key electrical specifications include a reverse voltage (Vr) of 650 V. The module is packaged in a tube format.
Feature Summary
- Integrates Trench technology for efficient power handling
- Supports high-temperature operation up to 200°C
- Designed for screw mount installation
Applications
- Power conversion systems requiring high thermal stability
- Industrial motor drives
- High-voltage switching applications
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the screw mount package type aligns with the intended mechanical assembly requirements. Ensure the 650 V reverse voltage rating meets the circuit design specifications. Check for any recent product change notices affecting availability or specifications.
Selection Notes
Select this module when a silicon-based Trench MOSFET-SBD combination is required for high-temperature environments. The 650 V rating suits medium-voltage applications. Verify that the screw mount interface is compatible with the heat sink and chassis design. Consider the operating temperature range of -60°C to +200°C against the system's thermal profile.
Part Context
This part belongs to the PM-IGBT-TFS-SBD-SP1F series from Microchip Technology. It is categorized as a discrete semiconductor module. The product line focuses on robust power solutions using silicon technology. The module integrates both MOSFET and Schottky Barrier Diode functions in a single package.
Replacement Considerations
Consult Microchip Technology for officially confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules without verifying pinout, electrical parameters, and thermal characteristics.
