FET, MOSFET Arrays MSCMC120AM03CT6LIAG product image

MSCMC120AM03CT6LIAG

  • Description:MOSFET 2N-CH 1200V 631A SP6C LI
  • Series:-

SKU:5d136f2e7056 Category: Brand:

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MSCMC120AM03CT6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 631A SP6C LI. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCMC120AM03CT6LIAG

  • Description:MOSFET 2N-CH 1200V 631A SP6C LI
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:631A (Tc)
  • Rds On (Max) @ Id, Vgs:3.4mOhm @ 500A, 20V
  • Vgs(th) (Max) @ Id:4V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs:1610nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:27900pF @ 1000V
  • Power - Max:2778W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP6C LI
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCMC120AM03CT6LIAG

MSCMC120AM03CT6LIAG

FET, MOSFET Arrays Overview

The MSCMC120AM03CT6LIAG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a two-element N-channel configuration housed in an SP6LI package designed for base mounting. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 805A at case temperature. Its maximum on-resistance is specified as 0.0031 ohms, with a peak power dissipation capability of 3200W under thermal conditions. The operational junction temperature range spans from -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

  • Utilizes silicon carbide technology for high-temperature stability and low switching losses
  • Integrates a phase-leg configuration with two N-channel elements
  • Features very low stray inductance design within the SP6LI module structure

FET, MOSFET Arrays Applications

  • High-power industrial motor drives
  • Uninterruptible power supply systems
  • Solar photovoltaic inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix and revision level against official Microchip documentation before procurement. Confirm that the SP6LI mounting interface matches the intended heatsink or chassis design. Ensure gate drive requirements align with the module's threshold characteristics. Check for any recent product change notifications regarding material composition or manufacturing location updates.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high current density and robust thermal performance in a compact form factor. The SP6LI package offers a balance between electrical isolation and mechanical stability for screw-mount applications. Consider the 175°C junction temperature rating for environments where extensive external cooling may be limited or where system efficiency demands reduced thermal resistance paths.

FET, MOSFET Arrays Part Context

This module belongs to the Microsemi/Microchip SiC power module family, specifically engineered for high-efficiency power conversion. The SP6LI packaging standard provides a standardized footprint for integration into larger power assemblies. It represents the transition from discrete components to integrated modules, simplifying layout and improving reliability in demanding power electronics applications.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the specific stray inductance characteristics or thermal profile of the SP6LI package. Verify pinout compatibility and gate drive voltage tolerances before integrating alternative sources.

MSCMC120AM03CT6LIAGMSCMC120AM03CT6LIAG

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