MSCMC120AM04CT6LIAG

FET, MOSFET Arrays Overview

The MSCMC120AM04CT6LIAG is a discrete semiconductor module manufactured by Microchip Technology. It utilizes Silicon Carbide (SiC) technology and is classified as a dual N-Channel MOSFET array in the SP6C LI package. The device supports screw mount installation with a maximum operating temperature of 175°C. Key electrical parameters include a drain-source voltage of 1200V, a continuous drain current of 742A at case temperature, and a maximum on-resistance of 2.85 mOhms at 600A and 20V gate drive. The module features a maximum power dissipation of 3200W at case temperature.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for enhanced thermal performance and switching efficiency compared to traditional silicon devices.
• Designed as a dual N-Channel phase leg configuration within the SP6C LI low-inductance power module package.
• Supports high-current applications with a continuous drain current rating of 742A at case temperature.

FET, MOSFET Arrays Applications

• High-power industrial motor drives
• Uninterruptible power supply (UPS) systems
• Industrial inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status and RoHS compliance details directly with the manufacturer or authorized distributors before procurement. Confirm that the SP6C LI package dimensions and mounting requirements align with the target application design. Ensure that the gate drive circuitry supports the specified threshold and voltage levels for optimal performance.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high current density and robust thermal management capabilities. The 1200V rating makes it suitable for medium-voltage AC drives. Consider the 2.85 mOhms on-resistance when calculating conduction losses at the intended operating current of 600A. Verify that the system can accommodate the 3200W power dissipation requirement under case temperature conditions.

FET, MOSFET Arrays Part Context

This part belongs to the Microchip MSCSICSP6 series of Silicon Carbide MOSFET modules. These modules are designed to replace traditional silicon IGBTs in high-efficiency power conversion systems. The SP6C LI package offers low stray inductance, which is critical for minimizing switching losses and voltage overshoot in high-speed SiC applications.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology for potential cross-reference options or updated product line replacements.