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MSCMC90AM12C3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 900V 110A SP3F. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCMC90AM12C3AG
- Description：MOSFET 900V 110A SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：900V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCMC90AM12C3AG
FET, MOSFET Arrays Overview
The MSCMC90AM12C3AG is a silicon carbide (SiC) MOSFET and Schottky Barrier Diode (SBD) module manufactured by Microchip Technology. It utilizes SP3F packaging with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a continuous drain current of 90 A, and a maximum gate-source voltage range of -10 V to +25 V. The device features a typical on-resistance of 31 mOhms and a forward voltage of 1.5 V. Operating temperatures range from -40°C to +125°C.
FET, MOSFET Arrays Feature Summary
- Integrated SiC MOSFET and SBD topology for high-efficiency power conversion
- SP3F package design optimized for low stray inductance
- High blocking voltage capability suitable for demanding power applications
FET, MOSFET Arrays Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'C3' against the official Microchip datasheet to confirm pinout and thermal characteristics. Ensure the SP3F mounting torque specifications are strictly followed during assembly. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a compact full-bridge configuration is required for high-frequency switching applications. The SiC technology offers superior thermal performance compared to traditional silicon devices. Evaluate the 90 A current rating against peak load requirements to ensure adequate headroom for system reliability and thermal management.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's PM-MOSFET-SIC-SBD series, designed for high-power density applications. The SP3F package family provides standardized mechanical dimensions for easy integration into existing power electronics designs. It represents a shift towards wide-bandgap semiconductors for improved efficiency.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting the official Microchip replacement guide or contacting technical support directly.
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