MSCSM120AM027CT6AG

$1,016.14

Description：MOSFET 2N-CH 1200V 733A SP6C
Series：-

SKU:651dda28808d Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM027CT6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 733A SP6C. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM027CT6AG

Description：MOSFET 2N-CH 1200V 733A SP6C
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：733A (Tc)
Rds On (Max) @ Id, Vgs：3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id：2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs：2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：27000pF @1000V
Power - Max：2.97kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP6C
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM027CT6AG

MSCSM120AM027CT6AG

FET, MOSFET Arrays Overview

The MSCSM120AM027CT6AG is a silicon carbide (SiC) MOSFET and Schottky Barrier Diode (SBD) discrete semiconductor module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 733 A. The device exhibits a maximum on-resistance of 3.5 mOhms and supports a power dissipation of 2.97 kW. Operating within a temperature range of -40°C to +125°C, it utilizes screw mount installation in the SP6C package.

FET, MOSFET Arrays Feature Summary

Integrated SiC MOSFET and SBD structure for high-efficiency switching applications
High thermal stability supporting operation up to +125°C junction temperature
Robust mechanical design utilizing screw mount terminals for secure integration

FET, MOSFET Arrays Applications

Industrial motor drives
Uninterruptible power supplies
Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified supply chain partners. Confirm that the received unit matches the specific MSCSM120AM027CT6AG designation and packaging details. Ensure storage conditions adhere to manufacturer guidelines to prevent moisture sensitivity damage prior to soldering or assembly processes.

FET, MOSFET Arrays Selection Notes

Select this module when system requirements demand high current handling capabilities exceeding 700 A at 1.2 kV blocking voltage. The low on-resistance minimizes conduction losses, making it suitable for high-power density designs. Consider the SP6C package dimensions and screw mounting requirements during mechanical layout planning to ensure adequate thermal interface and structural integrity.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's series of silicon carbide discrete modules designed for demanding power electronics environments. It combines advanced SiC technology with robust packaging to deliver superior performance compared to traditional silicon devices. The module integrates both switching and rectification functions into a single compact form factor.