MSCSM120AM027T6AG

FET, MOSFET Arrays Overview

The MSCSM120AM027T6AG is a full bridge phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an SP6 isolated package with screw mounting and M5 power connectors. The device supports a drain-source voltage of 1200 V and a continuous drain current of 733 A at 25 °C case temperature. Key electrical parameters include a maximum RDS(on) of 3.5 mΩ, a gate threshold voltage of 1.8 V to 2.8 V, and a junction-to-case thermal resistance of 0.051 °C/W. Operating temperatures range from -40 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Kelvin source connection for simplified gate drive circuitry
• Internal NTC thermistor for precise junction temperature monitoring
• Aluminum Nitride substrate designed for enhanced thermal conductivity
• Low stray inductance architecture optimized for high-frequency switching

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004630A when sourcing components. Confirm that handling procedures strictly follow electrostatic discharge precautions due to component sensitivity. Ensure mechanical mounting torque specifications are met during installation to maintain reliable thermal performance and electrical isolation.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high efficiency and stable operation at elevated frequencies. The low thermal resistance facilitates direct heatsink mounting. Verify that the system design accommodates the required gate drive voltages and current ratings to fully utilize the device's capabilities within the specified operating temperature range.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET power module family. It utilizes Silicon Carbide technology to deliver superior dynamic performance compared to traditional silicon devices. The SP6 package provides a robust solution for high-power density designs requiring reliable thermal management and electrical isolation.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence based on generic specifications alone.