MSCSM120AM02T6LIAG

$1,087.78

Description：MOSFET 2N-CH 1200V 947A
Series：-

SKU:a7ad00a981a4 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM02T6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 947A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM02T6LIAG

Description：MOSFET 2N-CH 1200V 947A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：947A (Tc)
Rds On (Max) @ Id, Vgs：2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id：2.8V @ 36mA
Gate Charge (Qg) (Max) @ Vgs：2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：36200pF @ 1000V
Power - Max：3.75kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

FET, MOSFET Arrays Overview

The MSCSM120AM02T6LIAG is a very low stray inductance phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 1200V drain-source voltage rating and a continuous drain current of 947A at a case temperature of 25°C. The device incorporates an internal thermistor for temperature monitoring and utilizes an aluminum nitride substrate to improve thermal performance. Key electrical specifications include a maximum drain-source on-resistance of 2.6mΩ, a total gate charge of 2784nC, and a junction-to-case thermal resistance of 0.04°C/W.

FET, MOSFET Arrays Feature Summary

Very low stray inductance design optimized for high-frequency operation
Integrated internal NTC thermistor for precise temperature monitoring
Aluminum Nitride substrate providing improved thermal dissipation
Direct mounting isolated package with M2.5 signal and M4/M5 power connectors

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A (DS00004562A) when sourcing components to ensure alignment with the documented electrical characteristics and mechanical dimensions. Confirm that handling procedures strictly adhere to electrostatic discharge precautions as the devices are sensitive to ESD. Ensure compatibility with recommended mounting torque specifications for M2.5, M4, and M5 terminals during installation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high efficiency and robust thermal management in high-power environments. The low junction-to-case thermal resistance supports direct heatsink mounting, reducing system complexity. Evaluate the operating frequency requirements against the dynamic characteristics to ensure optimal switching performance within the specified thermal limits.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's SP6L series of silicon carbide power modules, designed for high-performance industrial and automotive applications. The SP6L packaging provides a compact form factor with integrated gate drive capabilities and low parasitic inductance, facilitating efficient power conversion in demanding electrical architectures.