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MSCSM120AM03CT6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 805A SP6C LI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120AM03CT6LIAG
- Description：MOSFET 2N-CH 1200V 805A SP6C LI
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：805A (Tc)
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 400A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：2320nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：30200pF @ 1kV
- Power - Max：3.215kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP6C LI
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120AM03CT6LIAG
FET, MOSFET Arrays Overview
The MSCSM120AM03CT6LIAG is a silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates two N-channel MOSFETs and associated Schottky barrier diodes in a single phase-leg configuration. The device features a drain-source breakdown voltage of 1200 V and a continuous drain current of 805 A. The maximum on-resistance is specified at 0.0031 ohms. It utilizes the SP6LI low-inductance package with screw mount installation, supporting an operating junction temperature range from -40°C to +175°C.
FET, MOSFET Arrays Feature Summary
- Integrates a dual N-channel SiC MOSFET and SiC SBD phase leg for high-power switching applications.
- Utilizes SP6LI low-stray-inductance packaging to minimize switching losses and electromagnetic interference.
- Supports high-temperature operation up to 175°C junction temperature for robust thermal performance.
FET, MOSFET Arrays Applications
- High-efficiency motor drives
- Industrial power supplies
- Uninterruptible power systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix CT6LIAG against the manufacturer's latest datasheet to confirm pinout compatibility and electrical ratings. Confirm RoHS compliance status and check for any product change notifications or discontinuance notices prior to finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring high current density and low switching losses in a compact form factor. Ensure the gate driver circuit supports the required voltage levels and that the thermal management system can handle the specified power dissipation within the 175°C junction limit.
FET, MOSFET Arrays Part Context
This module belongs to the Microchip MSCSICSP6 family of silicon carbide power modules. These components are engineered for high-frequency, high-voltage applications where efficiency and power density are critical design constraints.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution lists for equivalent SP6LI packaged SiC phase legs. Verify that alternative parts match the 1200V rating, 805A current capacity, and 0.0031 ohm on-resistance specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
