MSCSM120AM042CT6AG

FET, MOSFET Arrays Overview

The MSCSM120AM042CT6AG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-Channel configuration with a 1.2 kV drain-source breakdown voltage and a continuous drain current of 495 A. The device incorporates a 5.2 mOhm maximum on-resistance and utilizes the SP6C package style for screw mounting. Operating within a temperature range of -40°C to +175°C, it dissipates up to 2.031 kW of power. Key switching parameters include a typical turn-on delay of 66 ns, turn-off delay of 166 ns, rise time of 74 ns, and fall time of 67 ns.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide technology for high-temperature stability and reduced switching losses compared to silicon devices.
• Designed as a dual phase leg module to support efficient inverter topologies in high-power applications.
• Features robust construction capable of withstanding transient short circuits and high avalanche energy.

FET, MOSFET Arrays Applications

• Electric vehicle traction inverters
• Industrial motor drives
• Renewable energy solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CT6AG against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the SP6C package dimensions align with the target heatsink design. Cross-reference the datasheet for any recent product change notifications or reliability test results relevant to the intended operating environment before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high voltage isolation and low conduction losses at elevated temperatures. The 495 A current rating suits medium-to-high power density designs. Consider the 5.2 mOhm on-resistance for efficiency calculations. Verify gate drive requirements match the specified threshold and voltage limits to ensure reliable switching performance without overstressing the gate oxide.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's MSCSM series of discrete semiconductor modules based on silicon carbide technology. The series is engineered for high-efficiency power conversion, offering superior thermal performance and switching speed over traditional silicon IGBTs. The SP6C packaging provides a standardized form factor for integration into various industrial and automotive power electronics architectures.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic SiC modules may not match the specific thermal resistance or dynamic characteristics required for direct replacement without circuit redesign.