MSCSM120AM042CT6LIAG

FET, MOSFET Arrays Overview

The MSCSM120AM042CT6LIAG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 805 A at case temperature. The device incorporates an integrated SiC Schottky barrier diode with a forward voltage of 1.5 V. Key electrical parameters include a maximum on-resistance of 3.1 mOhms, a gate-source voltage range of -10 V to +23 V, and a threshold voltage of 4 V. The module utilizes the SP6C LI package for screw mounting and operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Integrated monolithic SiC MOSFET and SBD structure for low stray inductance phase leg applications
• High thermal performance supporting operation up to 175°C junction temperature
• Low on-state resistance optimized for high-current power conversion efficiency

FET, MOSFET Arrays Applications

• Industrial motor drives and inverters
• High-efficiency DC-DC converters
• Uninterruptible power supply (UPS) systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'CT6LIAG' against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact datasheet revision required for your design. Cross-reference the SP6C LI package dimensions with your mechanical constraints before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current density and fast switching speeds. The 3.1 mOhm on-resistance supports efficient power handling in compact footprints. Consider the 175°C operating limit for high-temperature environments. Verify gate drive requirements align with the specified voltage thresholds and charge characteristics.

FET, MOSFET Arrays Part Context

This part belongs to the Microchip MSCSICSP6 series of discrete semiconductor modules. These modules are designed for high-power applications using silicon carbide technology. The SP6C LI package provides a robust solution for managing high currents while minimizing parasitic inductance in power circuits.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic replacements may not match the specific thermal or electrical characteristics of the SP6C LI package.