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MSCSM120AM042T6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 495A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120AM042T6AG
- Description：MOSFET 2N-CH 1200V 495A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：495A (Tc)
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs：1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：18100pF @ 1000V
- Power - Max：2.031kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120AM042T6AG
FET, MOSFET Arrays Overview
The MSCSM120AM042T6AG is a full bridge 1200V, 495A phase leg silicon carbide (SiC) MOSFET power module. It features an RDS(on) of 5.2 mΩ at TJ = 25 °C and supports a continuous drain current of 495 A at TC = 25 °C. The device operates within a junction temperature range of -40 °C to +175 °C and utilizes an SP6 package with M5 power connectors.
FET, MOSFET Arrays Feature Summary
- Kelvin source connection for simplified gate drive implementation
- Internal thermistor for precise temperature monitoring
- Aluminum Nitride substrate for enhanced thermal dissipation
- Low stray inductance design for high-frequency operation
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision DS00004629A against your design requirements. Confirm that the SP6 package dimensions and mounting torque specifications align with your heatsink interface. Ensure electrostatic discharge handling procedures are strictly followed during installation to prevent device damage.
FET, MOSFET Arrays Selection Notes
Select this component when designing systems requiring high efficiency and stable performance at elevated temperatures. The integrated Kelvin source simplifies layout compared to standard configurations. Evaluate the thermal resistance and switching energy characteristics against your specific bus voltage and load current conditions.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's SiC MOSFET power module lineup, designed for high-power density applications. It integrates N-Channel SiC MOSFETs into a single isolated package. The product line emphasizes low on-resistance and robust thermal management capabilities for demanding industrial environments.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other modules based solely on voltage or current ratings. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
