MSCSM120AM042T6LIAG

$655.57

Description：MOSFET 2N-CH 1200V 495A
Series：-

SKU:1d213cd7c0ee Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM042T6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 495A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM042T6LIAG

Description：MOSFET 2N-CH 1200V 495A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：495A (Tc)
Rds On (Max) @ Id, Vgs：5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id：2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs：1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：18100pF @ 1000V
Power - Max：2.031kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM042T6LIAG

MSCSM120AM042T6LIAG

FET, MOSFET Arrays Overview

The MSCSM120AM042T6LIAG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 495A. It features an RDS(on) of 5.2 mΩ, a continuous drain current of 495A at 25°C case temperature, and a maximum junction temperature of 175°C. The device utilizes an Aluminum Nitride substrate for thermal management and includes an internal NTC thermistor. Key dynamic parameters include a turn-on delay of 56 ns, rise time of 55 ns, turn-off delay of 166 ns, and fall time of 67 ns.

FET, MOSFET Arrays Feature Summary

Very low stray inductance design
Internal thermistor for temperature monitoring
Aluminum Nitride substrate for improved thermal performance
Direct mounting to heatsink with isolated package

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A (dated 06/2021) against the ordered component to ensure alignment with electrical specifications. Confirm that handling procedures account for electrostatic discharge sensitivity as indicated in the product overview. Ensure mounting torque values for M2.5, M4, and M5 terminals are strictly adhered to during installation.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency applications requiring low switching losses and high efficiency. The 175°C operating junction temperature allows for reduced cooling requirements compared to lower-temperature alternatives. Verify compatibility with gate drive voltages ranging from -10V to +23V and ensure the application can accommodate the specific thermal resistance characteristics provided in the datasheet.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SP6 series of very low stray inductance SiC MOSFET modules. It is designed as a single phase leg configuration, distinct from three-phase bridge modules. The module integrates a high-voltage SiC MOSFET optimized for high-power density conversion systems.