MSCSM120AM11T3AG

$264.06

Description：MOSFET 2N-CH 1200V 254A
Series：-

SKU:6460f9699f5b Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM11T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 254A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM11T3AG

Description：MOSFET 2N-CH 1200V 254A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：254A (Tc)
Rds On (Max) @ Id, Vgs：10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs：696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9060pF @ 1000V
Power - Max：1.067kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM11T3AG

MSCSM120AM11T3AG

FET, MOSFET Arrays Overview

The MSCSM120AM11T3AG is a phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source voltage of 1200 V and a continuous drain current of 254 A at 25 °C case temperature. The device has a maximum on-resistance of 10.4 mΩ and supports a junction temperature range from -40 °C to +175 °C. It utilizes screw mount installation and includes an internal thermistor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

High-speed switching with low on-resistance and ultra-low loss characteristics
Low stray inductance design with Kelvin source connection for simplified gate drive
Integrated internal thermistor for precise temperature monitoring
Aluminum Nitride substrate providing improved thermal performance

FET, MOSFET Arrays Applications

Induction heating systems
Welding equipment
Solar inverters
Electric vehicle motor drives
Traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004577A) against your procurement requirements. Confirm that all specified pin shorting instructions are strictly followed during assembly, as these are mandatory for proper operation. Ensure electrostatic discharge handling procedures are implemented to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component when high-frequency operation and high efficiency are required. The isolated package allows direct mounting to heatsinks. Verify that the gate drive circuitry can accommodate the specified voltage limits and that the PCB layout supports the solderable terminals for both power and signal connections.

FET, MOSFET Arrays Part Context

This module belongs to the SP3F series of SiC MOSFET power modules. It is designed for applications requiring robust performance under high thermal stress. The device integrates multiple components into a single compact unit to reduce system complexity and improve overall reliability in power conversion environments.