MSCSM120AM31CTBL1NG

FET, MOSFET Arrays Overview

The MSCSM120AM31CTBL1NG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200 V and 79 A. It integrates a SiC MOSFET with low RDS(on) of 31 mΩ and high-speed switching capabilities, alongside a SiC Schottky Diode featuring zero reverse recovery. The device utilizes a Si3N4 substrate with thick copper for improved thermal performance and includes an internal thermistor for temperature monitoring. Key electrical parameters include a continuous drain current of 79 A at 25 °C, a gate threshold voltage of 2.8 V typical, and a junction-to-heatsink thermal resistance of 0.483 °C/W.

FET, MOSFET Arrays Feature Summary

• Integrates SiC Power MOSFET with low on-resistance and high-speed switching characteristics
• Incorporates SiC Schottky Diode with zero reverse and forward recovery for efficient operation
• Features Kelvin source connection to facilitate easy drive circuit implementation
• Utilizes Si3N4 substrate with thick copper construction to enhance thermal dissipation

FET, MOSFET Arrays Applications

• High reliability power systems
• High efficiency AC/DC and DC/AC converters
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004076A when sourcing components to ensure alignment with final design specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions as mandated by the manufacturer. Ensure that thermal interface material selection matches the specified junction-to-heatsink thermal resistance requirements for optimal heat transfer performance in the target application environment.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high-frequency operation and superior thermal management within a compact profile. The integrated Kelvin source simplifies gate drive layout, reducing stray inductance effects. Consider the extended operating junction temperature range up to 175 °C for demanding environments. Evaluate the low parasitic capacitances against switching speed requirements to optimize converter efficiency and minimize electromagnetic interference during high-speed transitions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's phase leg SiC MOSFET power module series, designed for direct mounting to heatsinks. It represents an evolution in wide-bandgap semiconductor technology, offering isolated package solutions with solderable terminals for both power and signal connections. The product line emphasizes low weight and ultra-low profile dimensions to support modern, space-constrained power conversion system architectures.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature under switching conditions?

The recommended junction temperature under switching conditions is TJmax minus 25 °C.

Does the integrated SiC diode exhibit reverse recovery charge?

Yes, the body diode exhibits a reverse recovery charge of 550 nC typical under specific test conditions, despite being marketed as having zero reverse recovery in general features.

How is the internal temperature monitored in this module?

The module includes an internal NTC thermistor with a resistance of 50 kΩ at 25 °C for temperature monitoring purposes.