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MSCSM120AM31T1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 89A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120AM31T1AG
- Description：MOSFET 2N-CH 1200V 89A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：89A (Tc)
- Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
- Power - Max：395W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120AM31T1AG
FET, MOSFET Arrays Overview
The MSCSM120AM31T1AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 89A. It features an RDS(on) of 31 mΩ, a gate threshold voltage of 2.8V maximum, and a junction temperature range from -40°C to 175°C. The device utilizes an SP1F package with an Aluminum Nitride substrate for thermal management.
FET, MOSFET Arrays Feature Summary
- Kelvin source connection for simplified gate drive circuitry
- Integrated internal thermistor for real-time temperature monitoring
- Aluminum Nitride substrate designed for enhanced thermal dissipation
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision A (dated 06/2022) against your design requirements. Confirm that pins 1/2, 4/5, and 7/8 are shorted together during implementation. Ensure electrostatic discharge handling procedures are strictly followed due to component sensitivity.
FET, MOSFET Arrays Selection Notes
Select this module when high-frequency operation and low stray inductance are required. The isolated package allows direct mounting to heatsinks. Verify compatibility with the specified gate resistance values for optimal switching energy performance under your specific load conditions.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's SiC MOSFET power module lineup. It is designed as a phase leg configuration, integrating two N-channel devices within a single SP1F package structure for compact system integration.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FET, MOSFET Arrays FAQ
What is the recommended operating junction temperature range?
The recommended junction temperature under switching conditions ranges from -40°C to TJmax-25°C.
How should the Kelvin source pins be handled?
Pins 1/2, 4/5, and 7/8 must be shorted together to ensure proper gate drive functionality.
What is the isolation voltage rating of the module?
The RMS isolation voltage between any terminal and the case is rated at 4000V for one minute at 50 Hz/60 Hz.
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