MSCSM120AM31TBL1NG

FET, MOSFET Arrays Overview

The MSCSM120AM31TBL1NG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 79A. It features an RDS(on) of 31 mΩ, a gate-source voltage range of -10V to +23V, and a threshold voltage of 1.8V to 2.8V. The device operates within a junction temperature range of -55°C to 175°C with a maximum power dissipation of 310W. Dynamic characteristics include a turn-on delay of 30ns, fall time of 25ns, and total gate charge of 232nC. The package utilizes a SP1F form factor with screw mounting.

FET, MOSFET Arrays Feature Summary

• Utilizes Si3N4 substrate with thick copper for improved thermal performance
• Incorporates Kelvin source connection for simplified drive circuitry
• Includes internal NTC thermistor for precise temperature monitoring
• Features very low stray inductance design for high-speed switching

FET, MOSFET Arrays Applications

• High reliability power systems
• High efficiency AC/DC and DC/AC converters
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TBL1NG against official Microchip documentation to confirm pinout and terminal configuration. Ensure electrostatic discharge handling procedures are strictly followed during installation. Confirm that the required heatsink torque specifications align with the M4 mounting requirements specified in the datasheet to maintain proper isolation and thermal contact.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high-frequency operation and low conduction losses in single-phase configurations. Evaluate the thermal resistance and junction temperature limits against the expected load current. Consider the integrated thermistor for protection schemes. Verify compatibility with the recommended gate drive voltages and internal gate resistance values for optimal switching performance.

FET, MOSFET Arrays Part Context

This device belongs to the Microchip MSCSM120 series of silicon carbide power modules. It is designed as a phase leg configuration, distinct from full-bridge or dual packages. The module integrates N-channel SiC MOSFETs into a compact, isolated package suitable for direct heatsink mounting. It represents a solution for reducing system weight and profile while maintaining high efficiency.

FET, MOSFET Arrays Replacement Considerations

Consult the official Microchip product selector and datasheets for alternative part numbers within the MSCSM120 family. Verify electrical ratings, package dimensions, and pin configurations before substitution. No specific substitute part numbers are confirmed in the provided documentation.