MSCSM120DDUM16CTBL3NG

FET, MOSFET Arrays Overview

The MSCSM120DDUM16CTBL3NG is a silicon carbide (SiC) power module featuring a dual MOSFET and Schottky diode configuration. It offers a reverse voltage of 1.2 kV, continuous drain current of 150 A, and power dissipation of 560 W. The device utilizes screw mount installation with an SP1F package. Key electrical parameters include a fall time of 25 ns, rise time of 30 ns, on-resistance of 16 mOhms, and gate-source voltage range of -10 V to +23 V.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide technology for low on-resistance and high-speed switching capabilities.
• Integrates SiC Schottky diodes alongside power MOSFETs within a single compact module.
• Designed for chassis or screw mounting to facilitate direct heat sink integration.

FET, MOSFET Arrays Applications

• High-efficiency AC/DC and DC/AC converters
• Motor control systems
• AC switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CTBL3NG against official Microchip documentation to confirm thermal interface requirements and pinout compatibility. Ensure that the selected variant matches the intended voltage and current ratings for the target application. Cross-reference the datasheet for any recent product change notifications or errata sheets that may affect performance specifications or handling instructions prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high-frequency operation and superior thermal management compared to traditional silicon devices. The 16 mOhm on-resistance supports efficient conduction in high-current scenarios up to 150 A. Consider the 1.2 kV blocking capability for medium-voltage industrial applications. Evaluate the module's physical dimensions and mounting style against the available space and mechanical constraints of the final assembly.

FET, MOSFET Arrays Part Context

This part belongs to the MSCSM120x series of SiC power modules from Microchip Technology. These modules are engineered for robust performance in demanding power electronics environments. The series emphasizes reliability and efficiency through advanced semiconductor materials and optimized packaging technologies designed to minimize parasitic inductance and improve thermal conductivity.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other Microchip SiC modules with similar 1.2 kV ratings and comparable current capacities, such as variants within the same MSCSM120 family. Verify pin-to-pin compatibility and thermal resistance values when considering alternative part numbers from different manufacturers.