MSCSM120DDUM31CTBL2NG

FET, MOSFET Arrays Overview

The MSCSM120DDUM31CTBL2NG is a double dual common source silicon carbide (SiC) MOSFET power module rated at 1200 V and 79 A. It integrates SiC MOSFETs with low RDS(on) and high-speed switching capabilities, alongside SiC Schottky diodes featuring zero reverse recovery. The device utilizes a Si3N4 substrate with thick copper for improved thermal performance and includes an internal thermistor for temperature monitoring. Key electrical parameters include a maximum drain-source voltage of 1200 V, continuous drain current of 79 A at 25 °C, and a typical RDS(on) of 31 mΩ at 25 °C.

FET, MOSFET Arrays Feature Summary

• Double dual common source configuration integrating SiC MOSFETs and Schottky diodes
• Kelvin source connection for simplified gate drive implementation
• Internal NTC thermistor for precise junction temperature monitoring
• Si3N4 substrate with thick copper layers to enhance thermal dissipation

FET, MOSFET Arrays Applications

• High reliability power systems
• AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004112A) against your design requirements. Confirm that the package outline dimensions and mounting torque specifications align with your mechanical constraints. Ensure proper electrostatic discharge handling procedures are followed during installation, as these devices are sensitive to ESD. Cross-reference the thermal resistance values with your heatsink design calculations.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and high efficiency due to its low switching losses and zero reverse recovery characteristics. Consider the Kelvin source terminals if minimizing gate loop inductance is critical for your driver design. Evaluate the thermal management strategy based on the specified junction-to-heatsink thermal resistance and operating temperature range up to 175 °C.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's MSCSM series of silicon carbide power modules. It is designed to replace traditional silicon-based solutions in high-performance power conversion systems. The double dual common source architecture allows for compact integration of multiple switching elements within a single isolated package, supporting direct mounting to heatsinks.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers: None listed in the official documentation.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source terminals?

The Kelvin source terminals provide a dedicated path for the gate drive return current, separating it from the high-current power source. This reduces noise coupling and improves switching performance by minimizing the impact of parasitic inductance in the main current path.

How does the integrated thermistor function?

The module includes an internal NTC thermistor that provides a resistance value correlated to the junction temperature. This allows for real-time monitoring of the device's thermal state to prevent overheating and ensure safe operation within the specified temperature range.

What are the benefits of using SiC Schottky diodes in this module?

The integrated SiC Schottky diodes exhibit zero reverse recovery charge and zero forward recovery. This eliminates reverse recovery losses and associated voltage spikes, leading to higher efficiency and reduced electromagnetic interference compared to conventional silicon diodes.