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MSCSM120DDUM31TBL2NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 79A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120DDUM31TBL2NG
- Description：MOSFET 4N-CH 1200V 79A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel, Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：79A
- Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
- Power - Max：310W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120DDUM31TBL2NG
FET, MOSFET Arrays Overview
The MSCSM120DDUM31TBL2NG is a double dual common source silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 1200V drain-source voltage rating and a continuous drain current of 79A at 25°C, with an on-resistance of 31mΩ. The device incorporates an internal NTC thermistor for temperature monitoring and utilizes a Si3N4 substrate with thick copper for improved thermal performance. Designed for high-speed switching and low profile applications, it supports junction temperatures up to 175°C.
FET, MOSFET Arrays Feature Summary
- Double dual common source configuration
- Internal NTC thermistor for temperature monitoring
- Kelvin source connection for easy drive
- Si3N4 substrate with thick copper for improved thermal performance
FET, MOSFET Arrays Applications
- High reliability power systems
- AC switches
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix TBL2NG against official Microchip documentation to ensure correct package and terminal specifications. Confirm RoHS compliance status through the manufacturer's latest product change notifications or datasheet revision history before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring high efficiency and outstanding performance at high frequency operation. Consider its low junction-to-case thermal resistance and direct mounting capability when designing isolated power conversion systems that benefit from a very integrated approach.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's silicon carbide power module lineup, designed to overcome limitations of traditional silicon devices in high voltage and high frequency applications. It supports advanced power electronics architectures demanding higher thermal stability and reduced system size.
FET, MOSFET Arrays Replacement Considerations
Consult Microchip technical support or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules without validating electrical parameters and pin configurations.
FET, MOSFET Arrays FAQ
What is the maximum operating junction temperature?
The recommended operating junction temperature range extends up to 175°C.
Does the module include temperature sensing?
Yes, it features an internal NTC thermistor for temperature monitoring.
What type of substrate does the module use?
It uses a Si3N4 substrate with thick copper to improve thermal performance.
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