MSCSM120DUM027AG

FET, MOSFET Arrays Overview

The MSCSM120DUM027AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 733A. It features an RDS(on) of 3.5 mΩ, a total gate charge of 2088 nC, and a junction-to-case thermal resistance of 0.051 °C/W. The device operates within a junction temperature range of -40°C to 175°C and includes Kelvin sources for drive isolation.

FET, MOSFET Arrays Feature Summary

• Dual common source configuration with integrated Kelvin source terminals for low-noise gate driving
• Aluminum Nitride substrate providing high thermal conductivity and electrical isolation
• Low stray inductance design optimized for high-frequency switching applications

FET, MOSFET Arrays Applications

• AC switches
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision status before finalizing designs, as Microchip issues Product Change Notifications for updates. Confirm that the M5 power connector torque specifications are strictly followed during assembly to ensure reliable mechanical and electrical contact. Ensure electrostatic discharge precautions are implemented throughout handling and installation processes.

FET, MOSFET Arrays Selection Notes

Select this component when high current density and low conduction losses are required in compact power modules. The dual common source topology simplifies half-bridge configurations by sharing a common terminal. Evaluate the thermal impedance curves against the specific heatsink requirements to maintain the junction temperature within the recommended operating limits under continuous load conditions.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET discrete product family, designed to replace traditional silicon IGBTs in high-efficiency systems. It utilizes advanced packaging techniques to minimize parasitic inductance and maximize thermal performance compared to standard discrete components.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FET, MOSFET Arrays FAQ

What is the maximum RMS isolation voltage between any terminal and the case?

The maximum RMS isolation voltage is 4000 V for a duration of one minute at 50 Hz or 60 Hz.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage is specified between 1.8 V and 2.8 V at a drain current of 9 mA, measured across the operating temperature range.

What is the internal gate resistance value?

The internal gate resistance is typically 0.65 Ω.