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MSCSM120DUM042AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 495A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120DUM042AG
- Description：MOSFET 2N-CH 1200V 495A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：495A (Tc)
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：18100pF @ 1000V
- Power - Max：2031W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120DUM042AG
FET, MOSFET Arrays Overview
The MSCSM120DUM042AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 495A. It features an RDS(on) of 5.2 mΩ, VGS ratings of -10V/+25V, and operates within a junction temperature range of -40°C to +175°C. The device utilizes an aluminum nitride substrate for thermal management and includes Kelvin sources for low-stray-inductance driving.
FET, MOSFET Arrays Feature Summary
- Dual common source configuration with integrated body diodes
- Kelvin source connection for optimized gate drive performance
- Aluminum nitride substrate providing enhanced thermal conductivity
- Low stray inductance design supporting high-frequency switching
FET, MOSFET Arrays Applications
- AC switches
- Switched mode power supplies
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the datasheet revision history and any associated product change notifications before finalizing designs. Confirm that the M5 mounting torque specifications align with the mechanical constraints of the target heatsink assembly. Ensure electrostatic discharge handling protocols are strictly followed during installation.
FET, MOSFET Arrays Selection Notes
Select this component when high-temperature operation up to 175°C is required alongside high current capacity. The dual common source topology simplifies half-bridge configurations. Evaluate the thermal impedance characteristics against the specific cooling requirements of the application environment.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's silicon carbide power module family designed for high-efficiency power conversion. It integrates two N-channel SiC MOSFETs into a single isolated package, offering a compact solution for industrial and automotive power electronics applications requiring robust voltage and current handling.
FET, MOSFET Arrays Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, pinout compatibility, and thermal interface specifications.
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