MSCSM120DUM11T3AG

FET, MOSFET Arrays Overview

The MSCSM120DUM11T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 254A. It features an aluminum nitride substrate for thermal management and includes an internal NTC thermistor for temperature monitoring. Key electrical parameters include a maximum drain-source voltage of 1200V, continuous drain current of 254A at 25°C, and a typical on-resistance of 8.3mΩ at 25°C. The device operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes an aluminum nitride substrate to enhance thermal performance.
• Incorporates Kelvin source connections to facilitate gate drive circuitry.
• Features low stray inductance design for high-frequency operation.
• Includes an integrated internal thermistor for real-time temperature monitoring.

FET, MOSFET Arrays Applications

• AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004356A against the ordered component to ensure compatibility with existing designs. Confirm that handling procedures account for electrostatic discharge sensitivity as specified by the manufacturer. Ensure mounting torque specifications are strictly followed during installation to maintain package integrity and thermal interface quality.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-temperature stability and efficient switching characteristics provided by silicon carbide technology. Consider the isolated package design for direct heatsink mounting requirements. Evaluate the thermal resistance and operating temperature limits to ensure adequate cooling solutions are implemented for the intended duty cycle and ambient conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's discrete semiconductor module lineup, specifically designed for power electronics applications. It represents the company's silicon carbide product family, which focuses on high-voltage and high-temperature capabilities compared to traditional silicon devices.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source connection?

The Kelvin source connection is included to facilitate easy and accurate gate drive circuitry by providing a dedicated path for the gate signal reference.

How does the module handle temperature monitoring?

The module integrates an internal NTC thermistor, allowing for direct temperature monitoring of the device during operation.

What material is used for the substrate?

An aluminum nitride substrate is used to improve thermal performance within the module.