MSCSM120DUM31CTBL1NG

FET, MOSFET Arrays Overview

The MSCSM120DUM31CTBL1NG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200 V and 79 A. It features an RDS(on) of 31 mΩ, a continuous drain current of 79 A at 25 °C, and a maximum junction temperature of 175 °C. The device includes integrated SiC Schottky diodes with a forward voltage of 1.5 V and utilizes a BL1NG package for direct heatsink mounting.

FET, MOSFET Arrays Feature Summary

• Dual common source configuration with integrated Kelvin source terminals for optimized gate drive performance.
• Silicon carbide construction providing zero reverse recovery charge and positive temperature coefficient on forward voltage.
• Direct mounting isolated package design with low junction-to-heatsink thermal resistance for efficient heat dissipation.
• Integrated NTC thermistor for precise internal temperature monitoring.

FET, MOSFET Arrays Applications

• High reliability power systems
• AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm package type and terminal configuration. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly. Confirm that the application circuitry supports the specified 1200 V rating and 79 A continuous current limits under all operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency operation and high efficiency. The dual common source topology simplifies half-bridge driving requirements. Consider the 175 °C junction temperature capability for demanding thermal environments where standard silicon devices may be insufficient.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's Silicon Carbide discrete product family. It integrates two SiC MOSFETs and associated body diodes into a single compact unit. The technology leverages wide bandgap properties to achieve superior switching speeds and lower conduction losses compared to traditional silicon alternatives.

FET, MOSFET Arrays Replacement Considerations

MSCSM120HM31CTBL1NG

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature for switching operations?

The recommended junction temperature under switching conditions is TJmax minus 25 °C, while the absolute maximum operating junction temperature range extends up to 175 °C.

How does the device handle reverse recovery characteristics?

The integrated SiC Schottky diodes exhibit zero reverse recovery charge and zero forward recovery, eliminating reverse recovery current issues common in silicon diodes.

Is there an integrated mechanism for thermal management?

Yes, the module includes an internal NTC thermistor for temperature monitoring, allowing for active thermal protection and system optimization.