FET, MOSFET Arrays MSCSM120HM063CAG product image

MSCSM120HM063CAG

$914.16
  • Description:SIC MOSFET
  • Series:-

SKU:a6606f039516 Category: Brand:

  
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MSCSM120HM063CAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM063CAG

  • Description:SIC MOSFET
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM063CAG

MSCSM120HM063CAG

FET, MOSFET Arrays Overview

The Microchip Technology MSCSM120HM063CAG is a Silicon Carbide (SiC) PM-MOSFET-SIC-SP6C power module. It features an N-Channel configuration in a Full Bridge arrangement within the SP6 package, designed for screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 333 A. The device exhibits a low on-resistance of 7.8 mOhms with a gate-source voltage range of -10 V to +23 V. Thermal performance supports a maximum operating temperature of +175 C and a power dissipation capacity of 873 W.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide technology for enhanced thermal conductivity and high-temperature operation up to 175 C.
  • Integrates a full bridge configuration within a single SP6 package to reduce system footprint.
  • Features low on-resistance characteristics to minimize conduction losses in high-current applications.

FET, MOSFET Arrays Applications

  • High-power industrial motor drives
  • Industrial power supplies
  • Uninterruptible power systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'AG' against the official Microchip datasheet to confirm compliance with RoHS directives and material declarations. Ensure the ordering part number matches the exact pinout and thermal interface requirements of the target design. Cross-reference the SP6 package dimensions with the mechanical drawing to validate mounting hole alignment and torque specifications for reliable screw mount installation.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high current handling capabilities exceeding 300 A at 1.2 kV blocking voltage. The SP6 package is suitable for applications where screw-mount reliability is preferred over surface mount techniques. Consider the 7.8 mOhm on-resistance for efficiency optimization in high-power density designs. Verify that the gate drive voltage limits align with the specified -10 V to +23 V range to ensure safe operation.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET discrete semiconductor family, specifically utilizing the SP6 packaging format. It is engineered for robust performance in demanding power conversion environments. The SP6 package provides a standardized form factor for integration into larger power assemblies, facilitating thermal management through direct heatsink contact.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers within the same series or package type. Do not assume compatibility with other manufacturers' SP6 modules due to potential differences in pinout, thermal resistance, or electrical characteristics.

MSCSM120HM063CAGMSCSM120HM063CAG
$914.16
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