MSCSM120HM083AG

$582.46

Description：MOSFET 4N-CH 1200V 251A
Series：-

SKU:48a7488ba4ef Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120HM083AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 251A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM083AG

Description：MOSFET 4N-CH 1200V 251A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：251A (Tc)
Rds On (Max) @ Id, Vgs：10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs：696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9000pF @ 1000V
Power - Max：1.042kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM083AG

MSCSM120HM083AG

FET, MOSFET Arrays Overview

The MSCSM120HM083AG is a full bridge silicon carbide (SiC) power module rated at 1200V and 251A. It features an RDS(on) of 10.4 mΩ, a gate-source voltage range of -10V to +23V, and a junction temperature range from -40°C to 175°C. The device utilizes an Aluminum Nitride substrate for thermal management and includes Kelvin source connections for optimized drive performance.

FET, MOSFET Arrays Feature Summary

Integrated SiC MOSFETs with low on-resistance and high-temperature stability
Kelvin source configuration for simplified and stable gate driving
Aluminum Nitride substrate providing enhanced thermal conductivity
Low stray inductance design supporting high-frequency switching operations

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A against project requirements. Confirm that handling procedures account for electrostatic discharge sensitivity. Ensure mounting torque specifications for M6 heatsink and M5 terminals are strictly followed during installation to maintain isolation integrity and thermal performance.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high efficiency and compact form factors due to its low thermal resistance. Consider the 1200V rating and 251A continuous current capability when designing for high-power density environments. Evaluate the need for isolated package mounting directly to heatsinks based on system electrical isolation requirements.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's discrete semiconductor modules category, specifically designed as a full bridge SiC power module. It represents a solution for high-performance switching converters where traditional silicon devices may face limitations in efficiency and thermal management at elevated frequencies.