MSCSM120HM16TBL3NG

FET, MOSFET Arrays Overview

The MSCSM120HM16TBL3NG is a dual phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 150A. It features an RDS(on) of 16 mΩ, a gate-source voltage range of -10V to +23V, and a threshold voltage of 1.8V. The device supports a continuous drain current of 150A at 25°C and 120A at 80°C, with a maximum pulsed current of 300A. Power dissipation reaches 560W at 25°C. Operating junction temperature spans from -55°C to 175°C. Thermal resistance from junction to heatsink is 0.268 °C/W. The package weighs 32.5g.

FET, MOSFET Arrays Feature Summary

• Kelvin source connection for simplified gate drive implementation
• Integrated internal thermistor for precise temperature monitoring
• Silicon nitride substrate combined with thick copper layers for enhanced thermal management
• Solderable terminals designed for both power and signal connections

FET, MOSFET Arrays Applications

• High reliability power systems
• High efficiency AC/DC and DC/AC converters
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TBL3NG against official Microchip documentation to confirm terminal configuration and pinout compatibility. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly. Confirm that the mounting torque requirements align with the mechanical design specifications before integration into the final system.

FET, MOSFET Arrays Selection Notes

Select this component when a dual phase leg topology is required within a compact form factor. The low stray inductance design supports high-frequency switching operations efficiently. Evaluate the thermal performance characteristics against the expected operating junction temperatures to ensure adequate heat dissipation capabilities are maintained throughout the operational lifecycle.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET power module family, engineered for high-performance power conversion. It utilizes advanced silicon carbide technology to deliver superior electrical characteristics compared to traditional silicon devices. The dual phase leg configuration integrates two independent switches within a single isolated package for space-constrained designs.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and physical package dimensions to ensure functional equivalence without compromising system integrity.