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MSCSM120HM31T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 89A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120HM31T3AG
- Description：MOSFET 4N-CH 1200V 89A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：89A (Tc)
- Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
- Power - Max：395W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120HM31T3AG
FET, MOSFET Arrays Overview
The MSCSM120HM31T3AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 89A. It features an RDS(on) of 31 mΩ, a continuous drain current of 89A at 25°C case temperature, and a maximum junction temperature of 175°C. The device utilizes an Aluminum Nitride substrate for thermal management and includes an internal NTC thermistor for temperature monitoring.
FET, MOSFET Arrays Feature Summary
- Kelvin source connection for simplified gate drive implementation
- Internal NTC thermistor integrated for precise temperature monitoring
- Aluminum Nitride substrate designed to enhance thermal dissipation performance
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision A (DS00004643A) against the ordered component to ensure alignment with the provided electrical specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions as mandated by the manufacturer documentation.
FET, MOSFET Arrays Selection Notes
Select this module for high-frequency applications requiring low stray inductance and direct heatsink mounting. Ensure the design accommodates the isolated package requirements and utilizes the Kelvin source terminals to optimize switching performance and minimize noise coupling during operation.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's SiC MOSFET power module lineup, specifically engineered for high-efficiency power conversion systems. It represents a discrete semiconductor solution utilizing Silicon Carbide technology to deliver superior thermal and dynamic performance compared to traditional silicon-based alternatives.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are documented in the official datasheet.
FET, MOSFET Arrays FAQ
What is the operating junction temperature range?
The recommended operating junction temperature range under switching conditions is from -40°C to TJmax-25°C, with a maximum absolute rating of 175°C.
How is the gate drive implemented?
The module incorporates a Kelvin source terminal to facilitate easy and accurate gate drive implementation, reducing noise sensitivity.
Does the module include temperature sensing?
Yes, it contains an internal NTC thermistor with a typical resistance of 50 kΩ at 25°C for temperature monitoring purposes.
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