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MSCSM120TAM11TPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 251A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120TAM11TPAG
- Description：MOSFET 6N-CH 1200V 251A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：6 N-Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：251A (Tc)
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs：696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：9060pF @ 1000V
- Power - Max：1.042kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120TAM11TPAG
FET, MOSFET Arrays Overview
The MSCSM120TAM11TPAG is a triple phase leg silicon carbide (SiC) power module rated at 1200V and 251A. It features an RDS(on) of 10.4 mΩ, operating junction temperature range from -40°C to 175°C, and power dissipation of 1042W. The device utilizes an SP6-P package with an Aluminum Nitride substrate for thermal management.
FET, MOSFET Arrays Feature Summary
- Triple phase leg configuration
- Aluminum Nitride substrate
- Kelvin source connection
- Integrated NTC thermistor
FET, MOSFET Arrays Applications
- Uninterruptible power supplies
- Welding converters
- Switched mode power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision DS00004637A when sourcing components. Confirm that handling procedures account for electrostatic discharge sensitivity. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.
FET, MOSFET Arrays Selection Notes
Select this module for high-frequency applications requiring low stray inductance and high efficiency. The integrated Kelvin source simplifies gate drive circuit design. Verify compatibility with heatsink mounting requirements and ensure adequate cooling for the specified power dissipation levels.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's SiC MOSFET power module lineup. It is designed for high-power density inverters and converters. The SP6-P package provides isolation and robust thermal characteristics suitable for demanding industrial and automotive environments.
FET, MOSFET Arrays Replacement Considerations
Consult official documentation for verified substitutes. Cross-referencing requires matching voltage, current, and package specifications.
FET, MOSFET Arrays FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the module include a temperature sensor?
Yes, it includes an internal NTC thermistor for temperature monitoring.
What type of substrate is used?
An Aluminum Nitride (AlN) substrate is used for improved thermal performance.
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