MSCSM120TAM16CTPAG

FET, MOSFET Arrays Overview

The MSCSM120TAM16CTPAG is a triple phase leg silicon carbide MOSFET module manufactured by Microchip Technology. It utilizes N-channel technology within an SP6-P screw mount package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 171 A at case temperature. The on-resistance is specified as 16 mOhms. Gate-source voltage limits range from -10 V to +23 V, with a threshold voltage of 1.8 V. Power dissipation reaches 728 W. Operating temperatures span from -40°C to +175°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Integrates three independent N-channel SiC MOSFETs into a single compact power module for efficient space utilization in high-density designs.
• Leverages silicon carbide material properties to enable superior thermal conductivity and reduced switching losses compared to traditional silicon devices.
• Features a robust screw-mount baseplate design that facilitates direct attachment to heatsinks for effective thermal management under high load conditions.

FET, MOSFET Arrays Applications

• Industrial motor drives and variable frequency drive systems
• High-efficiency renewable energy inverters including solar and wind applications
• Uninterruptible power supply (UPS) systems requiring high reliability

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure compatibility with required gate drive voltages and thermal interface specifications. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve. Cross-reference the SP6-P package dimensions with mechanical drawings prior to PCB or chassis integration to prevent mounting errors.

FET, MOSFET Arrays Selection Notes

Select this component when designing three-phase topologies requiring high voltage blocking capabilities and low conduction losses. Evaluate the 16 mOhm on-resistance against system efficiency targets and thermal constraints. Ensure the gate driver can accommodate the specified voltage ranges and switching speeds. Consider the 728 W power dissipation rating relative to available cooling solutions and ambient operating environments.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's discrete semiconductor portfolio focusing on silicon carbide power solutions. It represents a specialized configuration designed for industrial power conversion where size reduction and performance enhancement are critical. The SP6-P packaging standardizes integration across various high-power electronic platforms.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific electrical characteristics or pinout configurations of the SP6-P package.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for this module?

The maximum operating junction temperature is specified as +175°C according to the product data sheet.

Does this module include integrated diodes?

The MSCSM120TAM16CTPAG is configured as a triple phase leg MOSFET module containing N-channel MOSFETs. Specific internal diode integration details should be verified in the detailed electrical characteristics section of the datasheet.

What is the recommended gate-source voltage range?

The absolute maximum ratings specify a gate-source voltage range from -10 V to +23 V for proper operation and protection.