MSCSM120TAM31CT3AG

$326.06

Description：MOSFET 6N-CH 1200V 89A SP3F
Series：-

SKU:1ba54a39de1c Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120TAM31CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 89A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120TAM31CT3AG

Description：MOSFET 6N-CH 1200V 89A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：395W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120TAM31CT3AG

MSCSM120TAM31CT3AG

FET, MOSFET Arrays Overview

The MSCSM120TAM31CT3AG is a three-phase bridge silicon carbide (SiC) power module featuring six N-channel MOSFETs and integrated Schottky diodes. It provides a drain-source voltage of 1200 V, continuous drain current of 89 A at 25 °C, and an on-resistance of 31 mΩ. The device utilizes an SP3F package with screw mounting, operates within a junction temperature range of -40 °C to 175 °C, and includes an internal NTC thermistor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

Integrated SiC Schottky diodes providing zero reverse recovery and zero forward recovery characteristics
Temperature-independent switching behavior with positive temperature coefficient on forward voltage
Kelvin source connection for simplified gate drive implementation
Internal NTC thermistor for direct temperature monitoring

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004774A against the manufacturer's official records before finalizing procurement. Confirm that pins 20, 24, and 26 are shorted together during installation to ensure proper three-phase bridge functionality. Ensure handling procedures strictly follow electrostatic discharge precautions due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency applications requiring low switching losses and high efficiency. The SP3F isolated package allows direct heatsink mounting. Verify that the required continuous current does not exceed 89 A at 25 °C or 71 A at 80 °C case temperature. Ensure the system design accommodates the specified 4000 V RMS isolation voltage between terminals and the case.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's Silicon Carbide Power Module series. It is designed as a complete three-phase leg solution, integrating both MOSFETs and anti-parallel diodes into a single unit. The module replaces discrete components to reduce parasitic inductance and simplify assembly in high-power conversion systems.