MSCSM120TAM31T3AG

$260.58

Description：MOSFET 6N-CH 1200V 89A
Series：-

SKU:9b93096da282 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120TAM31T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 89A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120TAM31T3AG

Description：MOSFET 6N-CH 1200V 89A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：395W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120TAM31T3AG

MSCSM120TAM31T3AG

FET, MOSFET Arrays Overview

The MSCSM120TAM31T3AG is a three-phase bridge silicon carbide (SiC) power module rated at 1200V and 89A continuous drain current. It features an RDS(on) of 31 mΩ, a junction temperature range of -40°C to 175°C, and a low thermal resistance of 0.38 °C/W. The device includes an internal NTC thermistor for monitoring, utilizes an Aluminum Nitride substrate, and requires shorting pins 20, 24, and 26 for operation.

FET, MOSFET Arrays Feature Summary

Utilizes Silicon Carbide technology for high-speed switching and ultra-low loss performance
Incorporates an Aluminum Nitride substrate to improve thermal management
Features Kelvin source connections to facilitate easy gate drive implementation
Includes an integrated internal thermistor for precise temperature monitoring

FET, MOSFET Arrays Applications

Uninterruptible power supplies
Welding converters
Switched mode power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A (June 2022) against your design requirements. Confirm that pin 20, pin 24, and pin 26 are correctly shorted together during assembly to enable the three-phase bridge functionality. Ensure proper electrostatic discharge handling procedures are followed throughout the manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this module when designing high-efficiency converters requiring robust thermal performance and low stray inductance. The isolated package allows direct mounting to heatsinks, while solderable terminals support both power and signal PCB connections. Consider the 175°C maximum junction temperature for demanding operating environments.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET discrete semiconductor product line. It is designed as a standalone power module intended for integration into larger power conversion systems. The SP1F/SP3F packaging style provides a standardized footprint for industrial and automotive applications.