MSCSM120TLM50C3AG

$144.80

Description：MOSFET 4N-CH 1200V 55A SP3F
Series：-

SKU:e2741bac2703 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120TLM50C3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 55A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120TLM50C3AG

Description：MOSFET 4N-CH 1200V 55A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Rds On (Max) @ Id, Vgs：50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：1990pF @ 1000V
Power - Max：245W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120TLM50C3AG

MSCSM120TLM50C3AG

FET, MOSFET Arrays Overview

The MSCSM120TLM50C3AG is a 1200V/55A three-level inverter silicon carbide (SiC) MOSFET power module. It integrates SiC Power MOSFETs and SiC Schottky Diodes (CR1, CR2). Key electrical parameters include a drain-source voltage of 1200 V, continuous drain current of 55 A at TC=25°C, and an on-resistance of 50 mΩ. The device features a Kelvin source for drive isolation, low stray inductance, and an AlN substrate for thermal management.

FET, MOSFET Arrays Feature Summary

Integrates SiC MOSFETs with zero reverse recovery characteristics
Utilizes AlN substrate for improved thermal performance
Includes Kelvin source terminals for simplified gate drive

FET, MOSFET Arrays Applications

Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision history to ensure compatibility with specific design requirements. Confirm that the package outline dimensions match the intended PCB footprint and heatsink interface. Ensure proper electrostatic discharge handling procedures are followed during installation and testing.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency operation and low junction-to-case thermal resistance. Consider the 1200V rating and 55A current capacity against system load profiles. Evaluate the benefits of the integrated SiC diodes for reducing switching losses compared to traditional silicon solutions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's silicon carbide power module lineup, designed for high-efficiency power conversion systems. It represents a move towards higher integration and better thermal management using advanced ceramic substrates like AlN.