MSCSM120VR1M11CT6AG

FET, MOSFET Arrays Overview

The MSCSM120VR1M16CTPAG is a triple Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates three N-channel SiC MOSFETs and associated Schottky diodes within an isolated SP6-P package designed for direct heatsink mounting. The device features a drain-source voltage rating of 1200 V and a continuous drain current of 171 A at 25 °C case temperature. Key electrical parameters include a maximum on-resistance of 16 mΩ, a gate threshold voltage ranging from 1.8 V to 2.8 V, and a total gate charge of 464 nC. The module incorporates an internal NTC thermistor with a resistance of 50 kΩ at 25 °C for thermal monitoring.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide technology for low on-resistance and high-temperature performance
• Features zero reverse recovery and zero forward recovery characteristics in the integrated Schottky diodes
• Incorporates an Aluminum Nitride substrate to improve thermal management capabilities
• Includes Kelvin source connections to facilitate simplified gate drive circuitry

FET, MOSFET Arrays Applications

• Power factor correction systems
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm exact configuration details. Ensure electrostatic discharge handling procedures are strictly followed during installation. Confirm that the mounting torque specifications align with the mechanical requirements of the target heatsink interface to maintain proper thermal contact and isolation integrity.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency operation and high-efficiency rectification. The low junction-to-case thermal resistance supports high-power density designs. Verify that the system voltage does not exceed the 1200 V rating and that the gate drive signals accommodate the specified voltage limits. Consider the operating temperature range when designing the thermal management solution.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's triple Vienna rectifier product line, specifically engineered for three-phase AC/DC conversion topologies. It combines multiple discrete semiconductor functions into a single compact unit to reduce parasitic inductance and simplify assembly. The design targets industrial power electronics where reliability and switching speed are critical performance factors.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source connection?

The Kelvin source connection provides a dedicated path for the gate drive return signal, separate from the high-current power source. This configuration minimizes the impact of voltage drops caused by switching currents, ensuring accurate gate voltage control and stable device operation.

How does the internal thermistor function?

An NTC thermistor is integrated directly into the module to monitor the junction temperature. It allows the system controller to track thermal conditions in real-time, enabling active protection mechanisms such as derating or shutdown if temperatures approach the maximum limit.

What are the benefits of the Aluminum Nitride substrate?

The Aluminum Nitride substrate offers superior thermal conductivity compared to traditional materials like aluminum oxide. This characteristic facilitates more efficient heat transfer from the semiconductor chips to the heatsink, allowing for lower junction temperatures and improved overall system reliability.