MSCSM120X10CTYZBNMG

FET, MOSFET Arrays Overview

The MSCSM120X10CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module manufactured by Microchip Technology. It integrates Silicon Carbide (SiC) MOSFETs, SiC Schottky diodes, and IGBTs within an isolated package designed for high-reliability applications. The device features low stray inductance, lead frames for power connections, a silicon nitride substrate, and an aluminum silicon carbide base plate. Key electrical ratings include a drain-source voltage of 1200 V, continuous drain currents up to 281 A at 25 °C for the main bridge, and a collector-emitter saturation voltage of 1.85 V for the solenoid IGBTs.

FET, MOSFET Arrays Feature Summary

• Integrates SiC MOSFETs, SiC Schottky diodes, and IGBTs for combined motor drive and auxiliary control functions
• Utilizes a silicon nitride substrate and aluminum silicon carbide base plate for enhanced thermal performance and weight reduction
• Includes internal thermistor for precise temperature monitoring
• Features low stray inductance design with solderable terminals for direct heatsink mounting

FET, MOSFET Arrays Applications

• Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) systems
• High reliability Power Core Module (PCM)
• Modular power module for Power Drive Electronic (PDE)

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip distributors or official channels. Confirm that the ordering suffix matches the specific configuration required for your application. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive semiconductor junctions.

FET, MOSFET Arrays Selection Notes

Select this module when a single integrated solution is required for three-phase motor control alongside dedicated braking, soft-start, and solenoid actuation circuits. Evaluate the thermal resistance and current capacity against the specific load requirements of EMA or EHA systems. Consider the operating temperature range and isolation voltage specifications to ensure compatibility with the target power electronics architecture.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's portfolio of hybrid power devices designed for aerospace and industrial actuation. It consolidates multiple switching stages into one package to reduce system complexity and footprint. The integration of SiC technology allows for higher efficiency and faster switching speeds compared to traditional silicon-based modules.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the main bridge SiC MOSFETs?

The maximum continuous drain current is 281 A at a case temperature of 25 °C.

Does the module include protection against electrostatic discharge?

The device is sensitive to electrostatic discharge; proper handling procedures must be followed, but no internal ESD protection circuitry is specified in the datasheet.

What type of substrate is used for thermal management?

The module uses a silicon nitride (Si3N4) substrate to improve thermal performance.