ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PM-MOSFET-SIC-BL3
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：-
- Configuration：Three Phase
- Vce(on) (Max) @ Vge, Ic：-
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：79 A
- Power - Max：310 W
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：3020 pF @ 1 kV
Download product information
Overview
The MSCSM120XM31RTBL3NG is a discrete semiconductor module manufactured by Microchip Technology, classified as a MOSFET-SiC SBD Module. It utilizes Silicon Carbide (SiC) technology and is configured as a Full Bridge. The device features an SP3F package with screw mount installation style. Key electrical parameters include a reverse voltage of 1.2 kV, a forward voltage of 1.5 V, and a gate-source voltage range of -10 V to +25 V. Continuous drain current is rated at 89 A, with a maximum power dissipation of 395 W. The on-resistance is 31 mOhms. Operating temperatures range from -40 C to +125 C.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-performance switching applications.
- Configured as a full bridge module integrating MOSFET and SiC Schottky Barrier Diode (SBD).
- Designed for screw mount installation in the SP3F package format.
Applications
- High-efficiency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the exact part number against official Microchip Technology documentation before procurement. Confirm that the specific suffix matches the required configuration. Ensure compatibility with existing thermal management solutions and gate drive circuits designed for SiC modules. Cross-reference datasheet specifications for mounting torque and interface requirements.
Selection Notes
Select this module for applications requiring high voltage blocking capability and low conduction losses. Consider the 1.2 kV rating and 89 A continuous current for robust system design. Evaluate the thermal performance within the specified operating temperature range. Ensure the gate drive voltage aligns with the -10 V to +25 V specification for optimal switching characteristics.
Part Context
This component belongs to the Microchip Technology discrete semiconductor module family, specifically focusing on MOSFET-SiC SBD modules. It represents the company's silicon carbide product line, designed to offer superior efficiency compared to traditional silicon devices. The SP3F packaging indicates a standardized form factor for power electronics integration.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. Consult Microchip Technology for direct replacements or pin-compatible alternatives within the same product family.
