MSCSM170AM029CT6LIAG

FET, MOSFET Arrays Overview

The MSCSM170AM029CT6LIAG is a very low stray inductance phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 1700 V drain-source voltage rating and a continuous drain current of 676 A at 25 °C case temperature. The device incorporates an internal thermistor for temperature monitoring and utilizes an aluminum nitride substrate for improved thermal performance. Key electrical parameters include a maximum RDS(on) of 3.75 mΩ, a gate-source voltage range of -10 V to +23 V, and a junction-to-case thermal resistance of 0.05 °C/W.

FET, MOSFET Arrays Feature Summary

• Integrated SiC Schottky diode with zero reverse recovery and zero forward recovery characteristics
• Very low stray inductance design optimized for high-frequency operation
• Internal NTC thermistor for precise junction temperature monitoring
• Aluminum Nitride (AlN) substrate providing enhanced thermal conductivity

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00003937A) against your design requirements before procurement. Confirm that the M4/M5 power connector torque specifications align with your assembly tooling capabilities. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when designing high-efficiency converters requiring low profile packaging and direct heatsink mounting. Consider the 1700 V rating and 676 A current capacity for robust industrial applications. Evaluate the low stray inductance benefits for minimizing switching losses in high-frequency environments compared to standard modules.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SP6LI series of very low stray inductance phase leg SiC MOSFET power modules. It is designed to replace older generation discrete components or higher-inductance modules in advanced power electronics architectures. The module integrates both the MOSFET and the anti-parallel SiC diode into a single isolated package.

FET, MOSFET Arrays Replacement Considerations

Direct replacement requires verifying mechanical footprint compatibility and pinout alignment. Check if the target application can accommodate the specific gate charge and switching energy characteristics. Ensure the new driver circuit supports the required -10 V/23 V gate voltage swing.