MSCSM170AM039CD3AG

$1,214.11

Description：MOSFET 2N-CH 1700V 523A
Series：-

SKU:4169829deeb1 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM039CD3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 523A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM039CD3AG

Description：MOSFET 2N-CH 1700V 523A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：523A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id：3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs：1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：29700pF @ 1000V
Power - Max：2.4kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM039CD3AG

MSCSM170AM039CD3AG

FET, MOSFET Arrays Overview

The MSCSM170AM039CD3AG is a 1700 V/523 A phase leg silicon carbide (SiC) power module. It integrates SiC MOSFETs and Schottky diodes with an aluminum nitride substrate for thermal performance. Key electrical parameters include a drain-source voltage of 1700 V, continuous drain current of 523 A at 25 °C, and RDS(on) of 5 mΩ. The device supports a junction temperature range from -40 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

Utilizes an aluminum nitride substrate for improved thermal management
Features Kelvin emitter connections for simplified gate drive integration
Provides zero reverse recovery and zero forward recovery characteristics in the integrated Schottky diode

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003968A against the manufacturer's official website before finalizing procurement. Confirm that the M6 mounting torque specifications align with your mechanical assembly requirements. Ensure electrostatic discharge handling procedures are strictly followed during component installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this module when high-voltage isolation and low thermal resistance are required. The integrated Schottky diode eliminates body diode reliance, reducing switching losses. Verify that the system can accommodate the 4000 V RMS isolation voltage rating between terminals and the case for safety compliance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's 1700 V silicon carbide power module portfolio. It is designed as a phase leg configuration, integrating both N-channel MOSFETs and complementary Schottky diodes into a single isolated package to simplify inverter topology design.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current ratings. Cross-referencing requires matching the SP6L or similar package outline dimensions and verifying equivalent thermal impedance curves.