MSCSM170AM058CD3AG

$934.03

Description：MOSFET 2N-CH 1700V 353A
Series：-

SKU:fb4d0f558b4d Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM058CD3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 353A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM058CD3AG

Description：MOSFET 2N-CH 1700V 353A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：353A (Tc)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id：3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：19800pF @ 1000V
Power - Max：1.642kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM058CD3AG

MSCSM170AM058CD3AG

FET, MOSFET Arrays Overview

The MSCSM170AM058CD3AG is a 1700 V/353 A phase leg silicon carbide (SiC) power module. It integrates an SiC MOSFET and an SiC Schottky diode within an isolated package designed for direct heatsink mounting. The device features Kelvin emitter connections to facilitate gate drive, M6 power connectors, and an Aluminum Nitride substrate for enhanced thermal management. Key electrical parameters include a maximum drain-source voltage of 1700 V, continuous drain current of 353 A at 25 °C, and typical RDS(on) of 5.8 mΩ at 25 °C. Junction-to-case thermal resistance is specified at 0.09 °C/W.

FET, MOSFET Arrays Feature Summary

Integrated SiC MOSFET with low on-resistance and high temperature performance capabilities
SiC Schottky Diode providing zero reverse recovery and zero forward recovery characteristics
Kelvin emitter configuration enabling simplified and stable gate drive requirements
Aluminum Nitride substrate construction supporting improved thermal dissipation

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003977A against the manufacturer's official records prior to finalizing procurement specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions as mandated by the component sensitivity ratings. Ensure all mechanical mounting torque values align with the M6 terminal specifications outlined in the package characteristics section of the documentation.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high-voltage isolation and robust thermal performance in a compact phase leg topology. The integrated Kelvin source pin simplifies driver layout compared to standard configurations. Evaluate the junction-to-case thermal resistance against your heatsink design to ensure operation remains within the recommended junction temperature range under switching conditions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's silicon carbide power solutions portfolio, which targets applications seeking to replace traditional silicon IGBTs. The product line emphasizes high efficiency, reduced system size, and improved reliability through advanced SiC technology. It supports various topologies including phase legs, full bridges, and three-phase bridges for industrial and automotive power conversion.