MSCSM170AM058CT6AG

FET, MOSFET Arrays Overview

The MSCSM170AM058CT6AG is a phase leg silicon carbide (SiC) power module rated at 1700 V and 353 A. It integrates a SiC MOSFET with an RDS(on) of 7.5 mΩ and a SiC Schottky diode. The device features Kelvin source connections, M5 power connectors, and an internal NTC thermistor for temperature monitoring. Thermal performance is supported by an Aluminum Nitride substrate, achieving a junction-to-case thermal resistance of 0.09 °C/W. The package provides 4000 V RMS isolation voltage.

FET, MOSFET Arrays Feature Summary

• Integrated SiC MOSFET and Schottky Diode
• Kelvin source connection for optimized gate drive
• Internal NTC thermistor for thermal management
• Aluminum Nitride substrate for enhanced heat dissipation

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003970A against your design requirements. Confirm that the M5 terminal torque specifications are strictly followed during assembly to ensure reliable electrical contact and mechanical stability. Ensure proper electrostatic discharge handling protocols are implemented throughout the manufacturing process to prevent damage to the sensitive semiconductor components.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring stable temperature behavior and low junction-to-case thermal resistance. The integrated Kelvin source simplifies gate drive circuitry compared to standard configurations. Verify that the application environment supports the specified operating case temperature range of -40°C to 125°C and that the heatsink mounting complies with the required torque values.

FET, MOSFET Arrays Part Context

This device belongs to Microchip's phase leg SiC power module family, designed for high-power density applications. It utilizes Silicon Carbide technology to achieve superior switching performance and thermal conductivity compared to traditional silicon devices. The module architecture allows for direct mounting to isolated heatsinks, facilitating compact system designs in demanding industrial and automotive environments.

FET, MOSFET Arrays Replacement Considerations

Datasheet does not list confirmed substitute part numbers.

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature under switching conditions?

The recommended junction temperature under switching conditions is TJmax minus 25 degrees Celsius.

How is the internal temperature monitored in this module?

The module includes an internal NTC thermistor with a typical resistance of 50 kΩ at 25°C and a B25/85 value of 3952 K.

What type of substrate material is used for thermal performance?

An Aluminum Nitride (AlN) substrate is utilized to improve thermal performance within the module package.