MSCSM170AM23CT1AG

FET, MOSFET Arrays Overview

The MSCSM170AM23CT1AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1700 V and 124 A. It features an internal SiC Schottky diode with zero reverse recovery. The device utilizes an aluminum nitride substrate for thermal management and includes a Kelvin source pin for optimized gate drive. Electrical specifications include a maximum drain-source on-resistance of 22.5 mΩ at 25 °C, a gate threshold voltage range of 1.8 V to 3.2 V, and a junction-to-case thermal resistance of 0.25 °C/W. Operating temperatures extend from -40 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Integrated SiC Schottky diode providing zero reverse recovery and positive temperature coefficient on forward voltage
• Kelvin source configuration enables easy gate drive connection by separating signal return from power current path
• Internal NTC thermistor allows direct monitoring of module temperature
• Aluminum nitride substrate provides improved thermal performance and low junction-to-case thermal resistance

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status through the latest datasheet revision. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity. Cross-reference the part number with the official Microchip product selector to validate availability in your region.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency applications requiring low switching losses and high efficiency. The 1700 V rating supports high-voltage bus architectures common in industrial drives. Evaluate the 124 A continuous current capability against thermal constraints and heatsink design requirements. Consider the integrated thermistor for precise thermal protection loops in demanding environments.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip SP3F series of isolated SiC MOSFET power modules. It integrates a half-bridge configuration containing both the SiC MOSFET and the complementary SiC Schottky diode within a single screw-mount package designed for direct mounting to a heatsink.

FET, MOSFET Arrays Replacement Considerations

Consult the official Microchip product selector or datasheet errata for confirmed substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings across different manufacturers.