MSCSM170DUM039AG

$659.29

Description：MOSFET 2N-CH 1700V 523A
Series：-

SKU:87f82ed01852 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170DUM039AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 523A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170DUM039AG

Description：MOSFET 2N-CH 1700V 523A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：523A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id：3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs：1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：29700pF @ 1000V
Power - Max：2400W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170DUM039AG

MSCSM170DUM039AG

FET, MOSFET Arrays Overview

The MSCSM170DUM039AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1700V and 523A. It features an RDS(on) of 5 mΩ, VGS ratings of -10V/23V, and operates within a junction temperature range of -40°C to 175°C. The device utilizes Kelvin sources for drive ease, incorporates M5 power connectors, and employs an aluminum nitride substrate for thermal management.

FET, MOSFET Arrays Feature Summary

Kelvin source configuration for simplified gate drive
Aluminum nitride substrate for enhanced thermal performance
Low stray inductance design for high-frequency operation

FET, MOSFET Arrays Applications

AC switches
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision date against the manufacturer's official records before procurement. Confirm that the specific ordering suffix matches the required package and terminal specifications. Ensure electrostatic discharge handling protocols are strictly followed during storage and installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high voltage isolation and low on-resistance. Evaluate the thermal resistance characteristics against the system's heatsinking capabilities. Verify that the gate drive circuitry supports the specified voltage limits and current requirements for optimal switching performance.

FET, MOSFET Arrays Part Context

This module belongs to Microchip Technology's silicon carbide power module lineup. It is designed for high-efficiency power conversion systems where reduced switching losses and high-temperature operation are critical. The dual common source architecture facilitates bridge leg configurations in various power electronic topologies.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for electrically equivalent alternatives with matching voltage and current ratings. Verify pin compatibility and thermal interface dimensions before substituting. Cross-reference internal gate resistance and capacitance values to ensure driver compatibility.