FET, MOSFET Arrays MSCSM170DUM15T3AG product image

MSCSM170DUM15T3AG

$219.63
  • Description:MOSFET 2N-CH 1700V 181A SP3F
  • Series:-

SKU:3d6283f413ad Category: Brand:

  
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MSCSM170DUM15T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 181A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170DUM15T3AG

  • Description:MOSFET 2N-CH 1700V 181A SP3F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual) Common Source
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C:181A (Tc)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs:534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:9900pF @ 1000V
  • Power - Max:862W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP3F
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM170DUM15T3AG

MSCSM170DUM15T3AG

FET, MOSFET Arrays Overview

The MSCSM170DUM15T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1700V and 181A. It features an internal NTC thermistor for temperature monitoring and utilizes an aluminum nitride substrate for improved thermal performance. The device includes Kelvin sources to facilitate easy gate drive connections and minimizes stray inductance. Key electrical parameters include a maximum drain-source voltage of 1700V, continuous drain current of 181A at 25°C case temperature, and a typical on-resistance of 11.7mΩ.

FET, MOSFET Arrays Feature Summary

  • Kelvin source configuration for simplified driver integration
  • Aluminum nitride substrate for enhanced thermal dissipation
  • Integrated negative temperature coefficient thermistor for junction temperature monitoring
  • Low stray inductance design optimized for high-frequency switching

FET, MOSFET Arrays Applications

  • AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the ordering suffix matches the required package and terminal specifications. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high-voltage isolation and efficient thermal management. The integrated thermistor allows for direct thermal feedback without external sensors. Verify that the gate drive circuitry supports the specified voltage limits and that the mounting torque adheres to the mechanical specifications provided in the datasheet.

FET, MOSFET Arrays Part Context

This module belongs to Microchip Technology's silicon carbide power module family. It is designed for applications demanding high efficiency and reliability under extreme operating conditions. The SP3F package provides a compact form factor suitable for direct heatsink mounting while maintaining electrical isolation between terminals and the case.

FET, MOSFET Arrays Replacement Considerations

Consult the manufacturer's official substitution guide for verified alternative part numbers. Do not assume functional equivalence with other modules based solely on voltage or current ratings. Verify pinout compatibility and thermal resistance characteristics before implementing any substitute components.

MSCSM170DUM15T3AGMSCSM170DUM15T3AG
$219.63
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