FET, MOSFET Arrays MSCSM170HM23CT3AG product image

MSCSM170HM23CT3AG

$504.40
  • Description:MOSFET 4N-CH 1700V 124A
  • Series:-

SKU:312bcc12a16a Category: Brand:

  
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MSCSM170HM23CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 124A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170HM23CT3AG

  • Description:MOSFET 4N-CH 1700V 124A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C:124A (Tc)
  • Rds On (Max) @ Id, Vgs:22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:6600pF @ 1000V
  • Power - Max:602W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

FET, MOSFET Arrays Overview

The MSCSM170HM23CT3AG is a full bridge silicon carbide (SiC) MOSFET power module rated at 1700 V and 124 A. It features an RDS(on) of 22.5 mΩ, a gate-source voltage range of -10 V to +23 V, and a threshold voltage of 3.2 V maximum. The device operates within a junction temperature range of -40 °C to 175 °C with a power dissipation of 602 W. Dynamic characteristics include a turn-on delay of 24 ns, rise time of 17 ns, and fall time of 19 ns.

FET, MOSFET Arrays Feature Summary

  • Integrated internal thermistor for precise temperature monitoring
  • Kelvin source connection facilitates simplified driver circuit design
  • Aluminum nitride substrate provides enhanced thermal conductivity
  • Temperature-independent switching behavior ensures stable operation

FET, MOSFET Arrays Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm package type and terminal configuration. Confirm RoHS compliance status through current datasheets. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation to prevent component damage.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency applications requiring low switching losses and high efficiency. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving circuit supports the required gate voltage levels and current capabilities for optimal switching performance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module family designed for robust industrial and automotive environments. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The full bridge configuration integrates multiple switches and diodes into a single isolated package.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical ratings and pin configurations before implementation.

MSCSM170HM23CT3AGMSCSM170HM23CT3AG
$504.40
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