SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
MSCSM170HM23CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 124A. Review the specifications below when checking this part for your BOM.
The MSCSM170HM23CT3AG is a full bridge silicon carbide (SiC) MOSFET power module rated at 1700 V and 124 A. It features an RDS(on) of 22.5 mΩ, a gate-source voltage range of -10 V to +23 V, and a threshold voltage of 3.2 V maximum. The device operates within a junction temperature range of -40 °C to 175 °C with a power dissipation of 602 W. Dynamic characteristics include a turn-on delay of 24 ns, rise time of 17 ns, and fall time of 19 ns.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and terminal configuration. Confirm RoHS compliance status through current datasheets. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation to prevent component damage.
Select this module for high-frequency applications requiring low switching losses and high efficiency. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving circuit supports the required gate voltage levels and current capabilities for optimal switching performance.
This component belongs to Microchip's silicon carbide power module family designed for robust industrial and automotive environments. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The full bridge configuration integrates multiple switches and diodes into a single isolated package.
Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical ratings and pin configurations before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.