MSCSM170HM45CT3AG

$272.51

Description：MOSFET 4N-CH 1700V 64A
Series：-

SKU:7209fdf9d7f7 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170HM45CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 64A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170HM45CT3AG

Description：MOSFET 4N-CH 1700V 64A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id：3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3300pF @ 1000V
Power - Max：319W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170HM45CT3AG

MSCSM170HM45CT3AG

FET, MOSFET Arrays Overview

The MSCSM170HM45CT3AG is a full bridge silicon carbide (SiC) MOSFET power module rated at 1700 V and 64 A. It integrates SiC MOSFETs with zero reverse recovery Schottky diodes, featuring low RDS(on), ultra-low loss, and temperature-independent switching behavior. The device includes an internal thermistor for monitoring, Kelvin source connections for easy drive, and very low stray inductance. Constructed on an aluminum nitride substrate, it offers improved thermal performance and direct heatsink mounting.

FET, MOSFET Arrays Feature Summary

Integrates SiC MOSFETs with zero reverse recovery Schottky diodes
Features temperature-independent switching behavior and positive temperature coefficient on forward voltage
Includes an internal NTC thermistor for temperature monitoring
Utilizes an aluminum nitride substrate for improved thermal performance

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision history to ensure compatibility with current design specifications. Confirm that all multiple inputs and outputs, such as pins 13/14, 29/30, and 22/23, are shorted together during implementation. Ensure proper electrostatic discharge handling procedures are followed due to device sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency operation requiring high efficiency and low junction-to-case thermal resistance. Consider the 1700 V rating and 64 A continuous drain current for robust power conversion needs. Verify isolation voltage requirements against the 4000 V RMS specification.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's silicon carbide power module family. It utilizes the SP3F package format, designed for screw mounting directly to a heatsink. The module provides an isolated package suitable for demanding industrial and automotive applications requiring reliable power switching.