MSCSM170TLM23C3AG

$353.06

Description：MOSFET 4N-CH 1700V 124A SP3F
Series：-

SKU:b7abebe80347 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170TLM23C3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 124A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170TLM23C3AG

Description：MOSFET 4N-CH 1700V 124A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：124A (Tc)
Rds On (Max) @ Id, Vgs：22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id：3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6600pF @ 1000V
Power - Max：602W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170TLM23C3AG

MSCSM170TLM23C3AG

FET, MOSFET Arrays Overview

The MSCSM170TLM23C3AG is a three-level inverter silicon carbide (SiC) MOSFET power module rated at 1700V and 124A. It integrates SiC MOSFETs with SiC Schottky diodes (CR1 and CR2). Key electrical parameters include a drain-source on-resistance of 22.5 mΩ maximum, gate threshold voltage ranging from 1.8V to 3.2V, and total gate charge of 356 nC. The device features an aluminum nitride substrate for thermal management, operates within a junction temperature range of -40°C to 175°C, and provides 4000V RMS isolation.

FET, MOSFET Arrays Feature Summary

Integrates SiC MOSFETs and SiC Schottky diodes with zero reverse recovery characteristics.
Utilizes an aluminum nitride substrate to enhance thermal performance.
Includes Kelvin source connections to facilitate easy gate drive implementation.
Designed for low stray inductance and high-frequency operation stability.

FET, MOSFET Arrays Applications

Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004365A against your design requirements. Confirm that the SP3F package dimensions and mounting torque specifications align with your mechanical constraints. Ensure electrostatic discharge handling procedures are strictly followed during installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-voltage three-level inverter topologies. Evaluate the thermal resistance and operating temperature limits against your cooling system capabilities. Consider the integrated Schottky diode benefits for efficiency improvements in high-frequency switching environments compared to standard silicon alternatives.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module family, specifically designed for advanced power conversion systems. It represents a move towards higher efficiency and power density solutions using wide-bandgap semiconductor technology. The module is part of a broader portfolio aimed at industrial and renewable energy applications.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces when considering alternative components.