MSCSM170TLM45C3AG

$196.72

Description：MOSFET 4N-CH 1700V 64A SP3F
Series：-

SKU:7035ce1fb287 Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM170TLM45C3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 64A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170TLM45C3AG

Description：MOSFET 4N-CH 1700V 64A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id：3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3300pF @ 1000V
Power - Max：319W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170TLM45C3AG

MSCSM170TLM45C3AG

FET, MOSFET Arrays Overview

The MSCSM170TLM45C3AG is a three-level inverter silicon carbide (SiC) MOSFET power module rated at 1700V and 64A. It features an SP3F package with aluminum nitride substrate for thermal performance. Key electrical parameters include a maximum drain-source voltage of 1700V, continuous drain current of 64A at 25°C, and typical on-resistance of 45mΩ at 20V gate drive. The device operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

Integrated SiC Schottky diodes with zero reverse recovery and temperature-independent switching behavior
Kelvin source connection for simplified gate drive implementation
Aluminum nitride substrate providing low junction-to-case thermal resistance
Low stray inductance design optimized for high-frequency operation

FET, MOSFET Arrays Applications

Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision date against the latest official Microchip documentation to ensure accuracy of electrical specifications. Confirm that the SP3F package dimensions and mounting torque requirements align with the specific heatsink interface design. Ensure electrostatic discharge handling procedures are strictly followed during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when designing three-level inverter topologies requiring high-voltage isolation and efficient thermal management. Evaluate the 45mΩ on-resistance against system conduction loss targets. Consider the 1700V rating for robustness against voltage transients in industrial power conversion environments.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip MSCSM170 series of silicon carbide power modules. It utilizes the SP3F package format, which supports direct chassis mounting. The series is engineered for applications demanding high reliability and superior thermal conductivity compared to traditional silicon-based alternatives.